The future of satellite communication (SATCOM) is being revolutionized by constellations of medium Earth orbit (MEO) and low Earth orbit (LEO) satellites, delivering high-speed, low-latency connections with comprehensive global coverage. A critical requirement for low-noise amplifiers (LNAs) in these advanced satellite systems is the ability to maintain low noise levels while achieving high gain. This challenge is particularly pronounced at Kurz (Ku)-band microwave frequencies and above. This study explores the development of gallium nitride (GaN) high electron mobility transistor (HEMT) LNAs in innovative configurations—cascode, triple-cascode, and quadruple-cascode—tailored specifically for Ku-band satellite applications. Employing Keysight ADS design software, the LNAs are carefully designed, with their matching circuits optimized to enhance overall performance. All three LNAs demonstrate comparable noise performance, with a noise figure (NF) of approximately 2.2 dB at 13 GHz. However, the quadruple-cascode LNA stands out, achieving a remarkable gain of 37 dB at the same frequency, compared to 15.9 dB for the cascode and 25 dB for the triple-cascode configurations. The impressive gain of the quadruple-cascode LNA, i.e., more than double that of the cascode LNA, highlights its potential as a highly effective topology for microwave and millimeter-wave LNAs. The advancement paves the way for enhanced satellite communication capabilities.